Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure
نویسندگان
چکیده
منابع مشابه
Resistivity of dilute 2D electrons in an undoped GaAs heterostructure.
We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an interme...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2003
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.90.056806